Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3
Author:
Affiliation:
1. College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, People's Republic of China
2. School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959606
Reference36 articles.
1. High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2∕HfO2–Al2O3nanolaminate∕Al2O3
2. Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer
3. Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure
4. Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application
5. In situ electron holography study of charge distribution in high-κ charge-trapping memory
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1. The effect of inserted SiO2 thickness on memory characteristics for nonvolatile memory with stacked trapping layer;Japanese Journal of Applied Physics;2020-05-01
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