Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films-Reference-Cited by-同舟云学术

Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films

Published:2018-09-26 Issue:1 Volume:216 Page:1800523
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Laurent Matthew A.¹,Keller Stacia²,Mishra Umesh K.²

Affiliation:

1. University of California2064 Kemper Hall, 1 Shields AveDavisCA, 95616USA

2. University of California2215 Engineering Science BuildingSanta BarbaraCA, 93106USA

Funder

Office of Naval Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800523

Reference31 articles.

1. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

2. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

3. InGaN-AlInGaN multiquantum-well LEDs

4. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer

5. Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

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1. Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate;Materials Science in Semiconductor Processing;2024-04

2. Growth and characterization of AlInN/GaN superlattices;Journal of Crystal Growth;2024-03

3. InGaN surface morphology evolution investigated by atomic force microscope with power spectral density analysis;Journal of Crystal Growth;2023-06

4. Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates;Advanced Electronic Materials;2023-05-02

5. The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures;Materials Science and Engineering: B;2023-05