Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates-Reference-Cited by-同舟云学术

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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Published:2010-06-29 Issue:7 Volume:25 Page:075013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ketteniss N,Khoshroo L Rahimzadeh,Eickelkamp M,Heuken M,Kalisch H,Jansen R H,Vescan A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

2. First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN

3. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

4. High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications;East European Journal of Physics;2023-12-02

2. Impact of Mole Fraction Variation on the Analog/RF Performance of Quaternary InAlGaN DG MOS-HEMTs;Journal of Electronic Materials;2022-03-07

3. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures;Materials;2022-01-31

4. Temperature dependent analytical model for transfer characteristics of GaN HEMTs with AlxInyGazN barrier layer;Materials Today: Proceedings;2022

5. E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study;Superlattices and Microstructures;2021-12

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