Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices-Reference-Cited by-同舟云学术

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Published:2019-10-18 Issue:23 Volume:216 Page:1900555
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Wenxi¹,Wang Fang¹,Zhang Jingwei¹,Li Chuang¹,Wei Junqing¹,Shen Jiaqiang¹,Shan Xin¹,Ren Tianling²,Zhao Jinshi¹,Song Zhitang³,Zhang Kailiang¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Film Electronic & Communication DevicesSchool of Electrical & Electronic EngineeringTianjin University of Technology Tianjin 300384 China

2. Institute of MicroelectronicsSchool of Information Science and TechnologyTsinghua University Beijing 100084 China

3. State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Micro-system and Information TechnologyChinese Academy of Sciences Shanghai 200050 China

Funder

Natural Science Foundation of Tianjin City

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900555

Reference44 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics

3. In-memory computing with resistive switching devices

4. Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

5. Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x

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2. Self-Rectifying Al2O3/TaO x Memristor With Gradual Operation at Low Current by Interfacial Layer;IEEE Transactions on Electron Devices;2021-12

3. Memory-centric neuromorphic computing for unstructured data processing;Nano Research;2021-04-13

4. Enhanced reliability through regulation of electrode resistance in indium tin oxide/HfO /TiN resistive memories;Materials Science in Semiconductor Processing;2020-09