Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)-Reference-Cited by-同舟云学术

Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

Published:2016-12 Issue:48 Volume:28 Page:10809-10809
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Sen¹²³,Lu Nianduan¹³,Zhao Xiaolong¹³,Xu Hui²,Banerjee Writam¹³,Lv Hangbing¹³,Long Shibing¹³,Li Qingjiang²,Liu Qi¹³,Liu Ming¹³

Affiliation:

1. Key Laboratory of Microelectronic Devices & Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 China

2. College of Electronic Science and Engineering; National University of Defense Technology; Changsha 410073 China

3. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM); Nanjing 210009 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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