Flexible random resistive access memory devices with ferrocene–rGO nanocomposites for artificial synapses-Reference-Cited by-同舟云学术

Flexible random resistive access memory devices with ferrocene–rGO nanocomposites for artificial synapses

Published:2021 Issue:17 Volume:9 Page:5749-5757
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhou Jiankui¹²³⁴,Feng Hanfang¹²³⁴,Wang Yadong¹²³⁴,Sun Qingqing¹²³⁴^ORCID,Liu Yingliang¹²³⁴,Liu Xuying¹²³⁴^ORCID,Zhang Li¹²³⁴,Cao Shaokui¹²³⁴⁵

Affiliation:

1. School of Materials Science and Engineering

2. Zhengzhou University

3. Zhengzhou 450001

4. People's Republic of China

5. Henan Key Laboratory of Advanced Nylon Materials and Application

Abstract

Flexible RRAM devices based on redox active ferrocene–rGO nanocomposites exhibit an enhanced ON/OFF ratio of 10⁸ and synapse simulations simultaneously.

Funder

National Natural Science Foundation of China

National Plan on Key Basic Research and Development

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC00227A

Reference47 articles.

1. On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

2. The future of electronics based on memristive systems

3. Recent Advances in Memristive Materials for Artificial Synapses

4. Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

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