Mask-free prototyping of metal-oxide-semiconductor devices utilizing focused electron beam induced deposition-Reference-Cited by-同舟云学术

Mask-free prototyping of metal-oxide-semiconductor devices utilizing focused electron beam induced deposition

Published:2013-10-20 Issue:2 Volume:211 Page:375-381
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Shawrav Mostafa Moonir¹,Wanzenboeck Heinz D.¹,Belic Domagoj¹,Gavagnin Marco¹,Bethge Ole¹,Schinnerl Markus¹,Bertagnolli Emmerich¹

Affiliation:

1. Institute of Solid State Electronics; Vienna University of Technology; Floragasse 7/1-E362 Vienna 1040 Austria

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions

2. Nanowire transistors without junctions

3. Hybrid Porphyrin–Silicon Nanowire Field-Effect Transistor by Opto-Electrical Excitation

4. Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography

5. An investigation on focused electron/ion beam induced degradation mechanisms of conjugated polymers

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