Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires-Reference-Cited by-同舟云学术

Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires

Published:2018-11-23 Issue: Volume: Page:1800562
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Liborius Lisa¹^ORCID,Heyer Fabian¹,Arzi Khaled¹,Speich Claudia¹,Prost Werner¹,Tegude Franz-Josef¹,Weimann Nils¹,Poloczek Artur¹^ORCID

Affiliation:

1. Components for High Frequency Electronics (BHE); University of Duisburg-Essen; Lotharstr. 55 47057 Duisburg Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800562/fullpdf

Reference29 articles.

1. An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band

2. Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors

3. GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy

4. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

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