Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors-Reference-Cited by-同舟云学术

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Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors

Published:2017-03-27 Issue:4 Volume:17 Page:2420-2425
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Farrell Alan C.^ORCID,Senanayake Pradeep,Meng Xiao¹^ORCID,Hsieh Nick Y.,Huffaker Diana L.¹

Affiliation:

1. School of Physics and Astronomy, Cardiff University, Cardiff, Wales, United Kingdom

Funder

Defense Advanced Research Projects Agency

Air Force Office of Scientific Research

Division of Electrical, Communications and Cyber Systems

National Science Foundation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b00024

Reference21 articles.

1. Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

2. Processes limiting the performance of InAs/GaSb superlattice mid-infrared PIN mesa photodiodes

3. Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

4. Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors

5. Analysis of the electrical properties of p–n GaAs homojunction under dc and ac fields

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