GaN-based high-frequency devices and circuits: A Fraunhofer perspective-Reference-Cited by-同舟云学术

GaN-based high-frequency devices and circuits: A Fraunhofer perspective

Published:2012-01-09 Issue:3 Volume:209 Page:491-496
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Waltereit Patrick,Bronner Wolfgang,Quay Rüdiger,Dammann Michael,Cäsar Markus,Müller Stefan,van Raay Friedbert,Kiefer Rudolf,Brückner Peter,Kühn Jutta,Musser Markus,Kirste Lutz,Haupt Christian,Pletschen Wilfried,Lim Taek,Aidam Rolf,Mikulla Michael,Ambacher Oliver

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. AlGaN/GaN epitaxy and technology

2. Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

3. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

4. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

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