Comparative Evaluation of Optimum Power and Efficiency Terminations Predicted by Alternative Methods for GaN Ka-band Power Amplifier Design
Author:
Affiliation:
1. EED - Univ. Roma Tor Vergata,Rome,ITA
2. Ant & RF Tech - VTT,Espoo,FIN
3. School of Engineering,Cardiff,UK
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9762009/9762075/09762218.pdf?arnumber=9762218
Reference9 articles.
1. Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies
2. A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
3. Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models
4. GaN-based high-frequency devices and circuits: A Fraunhofer perspective
5. Thermal-aware GaN/Si MMIC design for space applications
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