A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT

Published:2016-10 Issue: Volume: Page:
ISSN:
Container-title:2016 11th European Microwave Integrated Circuits Conference (EuMIC)
language:
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Author:

Feuerschutz Philip¹,Friesicke Christian²,Quay Rudiger²,Jacob Arne F.¹

Affiliation:

1. Technische Universität Hamburg-Harburg, Denickestr. 22, 21073 Hamburg

2. Fraunhofer Institute for Applied Solid-State Physics IAF, Tullastr. 72, 79108 Freiburg

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7764428/7777458/07777551.pdf?arnumber=7777551

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A High Efficiency Q-band MMIC GaN Power Amplifier for Space Applications;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

2. An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks;Micromachines;2023-01-10

3. Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks;Electronics;2022-06-21

4. Comparative Evaluation of Optimum Power and Efficiency Terminations Predicted by Alternative Methods for GaN Ka-band Power Amplifier Design;2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC);2022-04-07

5. Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design;IEEE Transactions on Nanotechnology;2021

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