Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors-Reference-Cited by-同舟云学术

Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors

Published:2021-11-10 Issue: Volume: Page:
ISSN:2688-4011
Container-title:Nano Select
language:en
Short-container-title:Nano Select

Author:

Minohara Makoto¹^ORCID,Asanuma Shutaro²,Asai Hidehiro²,Dobashi Yuka³,Samizo Akane³,Tezuka Yasuhisa⁴,Ozawa Kenichi⁵⁶,Mase Kazuhiko⁶⁷,Hase Izumi¹,Kikuchi Naoto¹,Aiura Yoshihiro¹

Affiliation:

1. Research Institute for Advanced Electronics and Photonics National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki Japan

2. Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki Japan

3. Department of Materials Science and Technology Tokyo University of Science Katsushika Tokyo Japan

4. Graduate School of Science and Technology Hirosaki University Hirosaki Aomori Japan

5. Department of Chemistry Tokyo Institute of Technology Meguro Tokyo Japan

6. Institute of Materials Structure Science High Energy Accelerator Research Organization (KEK) Tsukuba Ibaraki Japan

7. Department of Materials Structure Science SOKENDAI (The Graduate University for Advanced Studies) Tsukuba Ibaraki Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/nano.202100272

Reference55 articles.

1. Towards Oxide Electronics: a Roadmap

2. A Memory Structure with Different Control Gates

3. ZnO-based transparent thin-film transistors

4. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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