Electrical Evolution of p-Type SnO<sub>x</sub> Film and Transistor Deposited by RF Magnetron Sputtering-Reference-Cited by-同舟云学术

Electrical Evolution of p-Type SnO_x Film and Transistor Deposited by RF Magnetron Sputtering

Published:2023-06 Issue:6 Volume:70 Page:3100-3105
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhou Yuyan¹^ORCID,Song Yu¹,Hong Ruohao¹,Liu Xingqiang²^ORCID,Zou Xuming¹^ORCID,Iníguez Benjamin³^ORCID,Flandre Denis⁴^ORCID,Li Guoli¹^ORCID,Liao Lei²^ORCID

Affiliation:

1. The School of Physics and Electronics, Hunan University, Changsha, China

2. College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China

3. Departament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Tarragona, Spain

4. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université Catholique de Louvain, Leuven-la-Neuve, Belgium

Funder

National Natural Science Foundation of China

National Key Research and Development Program of Ministry of Science and Technology

Wallonie-Bruxelles/China (MOST) Cooperation Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10106455.pdf?arnumber=10106455

Reference37 articles.

1. Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering

2. Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors

3. P-type SnO thin films prepared by reactive sputtering at high deposition rates

4. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters

5. Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power