Characteristic Electronic Structure of SnO Film Showing High Hole Mobility-Reference-Cited by-同舟云学术

Characteristic Electronic Structure of SnO Film Showing High Hole Mobility

Published:2022-01-27 Issue:5 Volume:13 Page:1165-1171
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Minohara Makoto¹^ORCID,Hase Izumi¹,Aiura Yoshihiro¹^ORCID

Affiliation:

1. Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

Funder

Murata Science Foundation

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c04182

Reference44 articles.

1. Identification and design principles of low hole effective mass p-type transparent conducting oxides

2. Lead Halide Perovskite Nanocrystals in the Research Spotlight: Stability and Defect Tolerance

3. Efficient carrier transport in halide perovskites: theoretical perspectives

4. Unique Properties of Halide Perovskites as Possible Origins of the Superior Solar Cell Performance

5. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

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