Infrared optical characterization of epitaxial layer – substrate systems (II). Experimental results for AlxGa1−xAs/GaAS
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference36 articles.
1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
2. Refractive index of Ga1−xAlxAs
3. Raman scattering from phonon‐plasmon modes in Ga1−xAlxAs
4. Direct-energy-gap dependence on Al concentration inAlxGa1−xAs
5. Effective masses in Sn‐doped Ga1−xAlxAs (x<0.33) determined by the Shubnikov–de Haas effect
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1. Infrared Reflectivity Determination of Alloy Composition in AlxGa1–xAs and InxGa1–xAs Structures;Applied Spectroscopy;1997-03
2. Growth, Electrical, and Optical Properties of TlBiSe2 Single Crystals;Physica Status Solidi (a);1993-04-16
3. Si‐acceptor passivation onn‐type (AlGa)As post‐growth hydrogenation;Applied Physics Letters;1993-02-22
4. Ionization energy of the Si acceptor on AlxGa1-xAs;Semiconductor Science and Technology;1991-12-01
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