Si‐acceptor passivation onn‐type (AlGa)As post‐growth hydrogenation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108543
Reference16 articles.
1. Shallow donors andD‐Xcenters neutralization by atomic hydrogen in GaAlAs doped with silicon
2. Photoluminescence enhancement in post‐growth hydrogenated Ga1−xAlxAs (0≤x≤0.32) and GaAs/GaAlAs multilayer structures
3. Thermal conversion and hydrogenation effects in AlGaAs
4. Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure
5. Donor neutralization in GaAs(Si) by atomic hydrogen
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1. Photoluminescence Studies of Hydrogen-Passivated Al0.13Ga0.87As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1999-07-15
2. The influence of growth patterns on the transmission properties of nonabrupt GaAs/AlxGa1−xAs heterojunctions;Superlattices and Microstructures;1996-09
3. Electron transmission through a single nonabrupt GaAs/AlxGa1−xAs barrier subjected to an electric field;Physical Review B;1995-08-15
4. Photoluminescence measurements of complex defects in Si‐doped Al0.3Ga0.7As;Journal of Applied Physics;1994-12-15
5. Effects of hydrogenation of deep and shallow levels in AlGaAs grown by MBE;Materials Science and Engineering: B;1994-12
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