Thermal conversion and hydrogenation effects in AlGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341627
Reference9 articles.
1. Molecular beam epitaxial growth of high‐purity AlGaAs
2. Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy
3. High‐purity GaAs grown by molecular‐beam epitaxy
4. Photoluminescence of shallow acceptors in Al0.28Ga0.72As
5. Hydrogen passivation of C acceptors in high‐purity GaAs
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1. Ultraviolet photoemission spectroscopy of hydrogen complex deactivation on InP:Zn(100) surfaces;Applied Surface Science;2007-08
2. Light-induced reactivation of shallow acceptors in hydrogenated n-type AlxGa1−xAs;Physica Status Solidi (a);1994-08-16
3. The effect of rapid thermal annealing and hydrogenation of NTD GaAs irradiated with neutrons;Physica Status Solidi (a);1994-06-16
4. Si‐acceptor passivation onn‐type (AlGa)As post‐growth hydrogenation;Applied Physics Letters;1993-02-22
5. Minority carrier recombination in post-growth hydrogenated AlGaAs;Semiconductor Science and Technology;1993-02-01
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