Shallow donors andD‐Xcenters neutralization by atomic hydrogen in GaAlAs doped with silicon

Author:

Mostefaoui R.,Chevallier J.,Jalil A.,Pesant J. C.,Tu C. W.,Kopf R. F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 61 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals;Journal of Materials Research;2020-10-16

2. Effects of H2 Atmosphere Annealing on the Properties of CZT:In Single Crystals;Journal of Electronic Materials;2013-09-25

3. Band gap controlled H loss from passivated Hg1−xCdxTe (MCT) wafers under intense electronic excitations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05

4. Bipolaron mechanism of DX center in AlxGa1-xAs:Si;Acta Physica Sinica;2010

5. Study of H loss from hydrogenated Hg1−xCdxTe under high electronic excitation by elastic recoil detection analysis (ERDA);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05

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