Infrared Reflectivity Determination of Alloy Composition in AlxGa1–xAs and InxGa1

Infrared Reflectivity Determination of Alloy Composition in AlxGa1–xAs and InxGa1–xAs Structures

Published:1997-03 Issue:3 Volume:51 Page:433-437
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Engelbrecht J. A. A.¹,Botha J. R.¹

Affiliation:

1. Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6000, South Africa (J.A.A.E.); and Department of Physics, University of the Western Cape, South Africa (J.R.B.)

Abstract

Fourier transform infrared reflectance spectroscopy can be used to establish the height of the transverse optic mode peak of AlAs at 361 cm−1. The peak height is found to be linearly dependent on the aluminum content in Al xGa1– xAs layers on GaAs substrates. Previously published spectra for In xGa1– xAs yielded a similar result for the In content, from the transverse optic mode peak of InAs at 220 cm−1. A quick and nondestructive technique is proposed for the determination of the aluminum and indium mole fraction in these structures.

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/0003702971940332

Reference74 articles.

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4. Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAs

5. Accurate electron probe determination of aluminum composition in (Al, Ga)As and correlation with the photoluminescence peak

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