Etching of AlxGa1-xAs in Alkaline Solution
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/12/i=4/a=619/pdf
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective Lateral Etching of $\bf Al_{0.3}Ga_{0.7}As/GaAs$ Heterojunction Structure Using the Redox Solution of $\bf I_{2}/KI$;Japanese Journal of Applied Physics;1997-03-01
2. Infrared Reflectivity Determination of Alloy Composition in AlxGa1–xAs and InxGa1–xAs Structures;Applied Spectroscopy;1997-03
3. AlxGa−xAs/GaAs heterostructure characterization by wet chemical etching;Materials Science and Engineering: B;1993-07
4. The Study of Native Oxide on Chemically Etched GaAs (100) Surfaces;Journal of The Electrochemical Society;1992-11-01
5. References;Thin Films by Chemical Vapour Deposition;1990
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