AlxGa−xAs/GaAs heterostructure characterization by wet chemical etching
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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3. Monolithic integration of InGaAsP heterostructure lasers and electrooptical devices
4. Optically integrated coherently coupled AlxGa1−xAs lasers
5. An AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process
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1. Wet etching of III–V semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
2. Chapter 6 Wet etching of III–V semiconductors;Processing and Properties of Compound Semiconductors;2001
3. Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR;Materials Science and Engineering: B;1999-11
4. Preparation of Stair-Step Grooves by Wet Etching of AlAs/GaAs Heterostructures & MOCVD Growth of QWR;Heterostructure Epitaxy and Devices — HEAD’97;1998
5. The Development of a Highly SelectiveKI/I2/H2O/H2SO4Etchant for the Selective Etching ofAl0.3Ga0.7As over GaAs;Japanese Journal of Applied Physics;1997-06-15
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