Optically integrated coherently coupled AlxGa1−xAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93925
Reference14 articles.
1. GaAs‐AlxGa1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback
2. Single-wavelength operation of 1.53 μm GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector under direct modulation up to 1 GHz
3. Dynamic spectral width of rapidly modulated 1.58 μm GaInAsP/InP buried-heterostructure distributed-Bragg-reflector integrated-twin-guide lasers
4. CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region
5. Optical Coupling Effect of Twin Lasers Fabricated by Wet Chemical Etching
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1. The Development of a Highly SelectiveKI/I2/H2O/H2SO4Etchant for the Selective Etching ofAl0.3Ga0.7As over GaAs;Japanese Journal of Applied Physics;1997-06-15
2. Reaction kinetics of photoactive defects in semiconductor dissolution;AIChE Journal;1996-08
3. AlxGa−xAs/GaAs heterostructure characterization by wet chemical etching;Materials Science and Engineering: B;1993-07
4. Identification of the source of deficient functioning in LOC laser heterostructures;Acta Physica Hungarica;1992-03
5. Physics of Heterostructures and Heterostructure Devices;The Physics of Submicron Semiconductor Devices;1988
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