Number‐of‐layer resolved (Mo, W)‐(S 2 , Se 2 ) phonon relaxation-Reference-Cited by-同舟云学术

Number‐of‐layer resolved (Mo, W)‐(S 2 , Se 2 ) phonon relaxation

Published:2017-01-13 Issue:4 Volume:48 Page:592-595
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J. Raman Spectrosc.

Author:

Liu Yonghui¹,Bo Maolin²,Guo Yongling¹,Yang Xuexian³,Zhang Xi⁴,Sun Chang Q.⁵,Huang Yongli¹

Affiliation:

1. Key Laboratory of Low‐Dimensional Materials and Application Technologies, (Ministry of Education), Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering Xiangtan University Hunan 411105 China

2. College of Mechanical and Electrical Engineering Yangtze Normal University Chongqing 408100 China

3. Department of Physics Jishou University Jishou 416000 Hunan China

4. Institute of Nanosurface Science and Engineering Shenzhen University Shenzhen 518060 China

5. NOVITAS, School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798

Funder

National Science Foundation

Ministry of Education of the People's Republic of China

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5081

Reference26 articles.

1. Anharmonicity of optic modes in monolayer MoS2

2. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

3. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

4. MoS2 thin films as electrically tunable materials for microwave applications

5. Nb-doped single crystalline MoS2 field effect transistor

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