Nb-doped single crystalline MoS2 field effect transistor
Author:
Affiliation:
1. Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439, USA
2. Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, USA
Funder
DOE Office of Basic Energy Science
DOE Office of High Energy Physics
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919565
Reference21 articles.
1. Single-layer MoS2 transistors
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4. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
5. High-mobility field-effect transistors based on transition metal dichalcogenides
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