High dynamic range SIMS depth profiling onin situ ion-beam-generated mesas using the ion microscope
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. and in Secondary Ion Mass Spectrometry: SIMS III, Springer Series in Chemical Physics 19, ed. by and p. 52. Springer Verlag, Berlin (1982).
2. and in Secondary Ion Mass Spectromety: SIMS IV, Springer Series in Chemical Physics 36, ed. by and p. 308. Springer Verlag, Berlin (1984).
3. Optimization of the dynamic range of SIMS depth profiles by sample preparation
4. European Patent Application EP-A-0350815 (1987).
5. in Secondary Ion Mass Spectrometry: SIMS VII, ed. by and p. 885, Wiley, Chichester (1990).
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2. Dual-beam versus single-beam depth profiling: Same sample in same instrument;Rapid Communications in Mass Spectrometry;2013-11-11
3. Ion Microscopy with Resonant Ionization Mass Spectrometry: Time-of-Flight Depth Profiling with Improved Isotopic Precision;European Journal of Mass Spectrometry;2010-02-01
4. Mesa sample preparation for secondary ion mass spectrometry depth profiling using an automated dicing saw;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
5. Quantification in dynamic SIMS: Current status and future needs;Applied Surface Science;2008-12
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