Back side SIMS analysis-Reference-Cited by-同舟云学术

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Back side SIMS analysis

Published:2014-03-21 Issue:S1 Volume:46 Page:241-243
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Stevie F. A.¹,Garcia R.¹,Richardson C.²,Zhou C.¹

Affiliation:

1. Analytical Instrumentation Facility; North Carolina State University; 2410 Campus Shore Drive Raleigh NC 27695 USA

2. Allied High Tech Products Inc.; Rancho Dominguez CA USA

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5470/fullpdf

Reference10 articles.

1. A High Depth Resolution Backside Secondary Ion Mass Spectrometry Technique Used for Studying Metal/Gaas Contacts

2. M. J. P. Hopstaken C. Cabral , Jr. D. Pfeiffer C. Molella P. Ronsheim Frontiers of Characterization and Metrology for Nanoelectronics:2009, AIP Conf. Proc. 1173 2009 94 98

3. Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

4. Site-specific SIMS backside analysis

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ToF-SIMS depth profiling of altered glass;npj Materials Degradation;2019-04-02

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