P-1.4: Elevated-Metal Metal-Oxide Thin-Film Transistor with Fluorinated Indium-Gallium-Zinc Oxide Channel towards Flexible Applications
Author:
Affiliation:
1. Department of Electronic and Computer Engineering; the Hong Kong University of Science and Technology; Clear Water Bay, Kowloon Hong Kong
2. HKUST Jockey Club Institute for Advanced Study; Kowloon Hong Kong
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sdtp.12772/fullpdf
Reference8 articles.
1. An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors;Li;Appl. Phys. Lett.,2017
2. Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics;Lu;IEEE Electron Device Lett.,2016
3. The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on the Leakage Characteristics of Zinc Oxide Thin-Film Transistors;Lu;IEEE Trans. Electron Devices,2014
4. Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics;Lin;ECS Trans.,2013
5. Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors;Furuta;ECS J. Solid State Sci. Technol.,2016
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