The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on the Leakage Characteristics of Zinc Oxide Thin-Film Transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/6776447/06737269.pdf?arnumber=6737269
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1. Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure;IEEE Electron Device Letters;2024-09
2. Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination;IEEE Transactions on Electron Devices;2024-02
3. Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor;Advanced Electronic Materials;2022-10-18
4. Elevated‐Metal Metal‐Oxide Thin‐Film Transistors: A Back‐Gate Transistor Architecture with Annealing‐Induced Source/Drain Regions;Amorphous Oxide Semiconductors;2022-05-20
5. Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses;IEEE Electron Device Letters;2021-11
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