Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Abstract

We report successful implementation of top-gate staggered a-IGZO TFTs with decent performance and environmental stability by adopting the SiOx/SiNx bi-layer gate-insulator stack. We successfully integrated the top-gate staggered a-IGZO TFTs into a working 2.2-inch AMOLED display panel, demonstrating the real use of the developed TFTs. We had also successfully implemented flexible top-gate staggered a-IGZO TFTs on colorless and transparent polyimide-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility>10 cm2/V⋅s) either as fabricated or as de-bonded from the carrier glass. By bending the devices to different radii of curvature, influences of mechanical strains on characteristics of the flexible a-IGZO TFTs were also investigated.