Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation-Reference-Cited by-同舟云学术

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Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation

Published:2020-06-23 Issue:9 Volume:257 Page:2000218
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Lee Miso¹^ORCID,Youn Yong¹,Jeong Jae Kyeong²,Kang Youngho³,Han Seungwu¹

Affiliation:

1. Department of Materials Science and Engineering Seoul National University Seoul 08826 Korea

2. Department of Electronic Engineering Hanyang University Seoul 04763 Korea

3. Department of Materials Science and Engineering Incheon National University Incheon 22012 Korea

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000218

Reference50 articles.

1. Substitutional doping of amorphous silicon

2. The physics of amorphous-silicon thin-film transistors

3. Amorphous-silicon field-effect device and possible application

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Amorphous oxide channel TFTs

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1. High-performance p-channel CuIBr thin-film transistor synthesized from solution in the atmosphere;Applied Physics Letters;2023-05-08

2. Oxygen‐Induced Phase Separation in Sputtered Cu–Sn–I–O Thin Films;physica status solidi (a);2023-01-05

3. Amorphous copper iodide: a p-type semiconductor for solution processed p-channel thin-film transistors and inverters;Journal of Materials Chemistry C;2022

4. Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors;physica status solidi (RRL) – Rapid Research Letters;2021-10-23

5. Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors;Advanced Science;2021-05-11

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