Analysis of Deep Traps in Mist Chemical Vapor Deposition‐Grown n‐Type α‐Ga 2 O 3 by Photocapacitance Method-Reference-Cited by-同舟云学术

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Analysis of Deep Traps in Mist Chemical Vapor Deposition‐Grown n‐Type α‐Ga 2 O 3 by Photocapacitance Method

Published:2021-01-29 Issue:5 Volume:258 Page:2000622
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Takane Hitoshi¹^ORCID,Kaneko Kentaro¹²³,Shinohe Takashi⁴,Fujita Shizuo¹³

Affiliation:

1. Department of Electronic Science and Engineering Kyoto Uniersity Kyoto 615-8510 Japan

2. Engineering Education Research Center Kyoto University Kyoto 615-8530 Japan

3. Photonics and Electronics Science and Engineering Center Kyoto University Kyoto 615-8520 Japan

4. FLOSFIA Inc. Kyoto 615-8244 Japan

Funder

Japan Science and Technology Agency

Council for Science, Technology and Innovation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000622

Reference47 articles.

1. State of the art of high temperature power electronics

2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

3. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases

4. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

5. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

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1. Structural characterization of threading dislocation in α-Ga2O3 thin films on c- and m-plane sapphire substrates;Journal of Applied Physics;2024-07-10

2. On the nature of majority and minority traps in β-Ga2O3: A review;Materials Today Physics;2023-08

3. Progress in α-Ga₂O₃ for practical device applications;Japanese Journal of Applied Physics;2023-06-01

4. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga₂O₃ toward realizing power device applications;Applied Physics Letters;2022-12-26

5. Development of a-Ga2O3 Power Devices;2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia);2022-05-15

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