On the nature of majority and minority traps in β-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mi mathvariant="bold-italic">G</mml:mi><mml:msub><mml:mi mathvariant="bold-italic">a</mml:mi><mml:mn mathvariant="bold">2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="bold">O</mml:mi><mml:mn mathvariant="bold">3</mml:mn></mml:msub></mml:math>: A review-Reference-Cited by-同舟云学术

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On the nature of majority and minority traps in β-Ga2O3: A review

Published:2023-08 Issue: Volume:36 Page:101155
ISSN:2542-5293
Container-title:Materials Today Physics
language:en
Short-container-title:Materials Today Physics

Author:

Labed Madani,Sengouga Nouredine,Venkata Prasad Chowdam,Henini Mohamed,Rim You Seung^ORCID

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science

Reference105 articles.

1. An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application;Xue;Nanoscale Res. Lett.,2018

2. Review of Ga2O3 -based optoelectronic devices;Guo;Mater. Today Phys.,2019

3. Review of self-powered solar-blind photodetectors based on Ga2O3;Wu;Mater. Today Phys.,2022

4. Review—recent advances in designing gallium oxide MOSFET for RF application;Yadava;ECS J. Solid State Sci. Technol.,2020

5. Trench gate β-Ga2O3 MOSFETs: a review;Chen;Eng. Res. Express.,2023

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1. Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs);Journal of Science: Advanced Materials and Devices;2024-09

2. Flexible Single Microwire X‐Ray Detector with Ultrahigh Sensitivity for Portable Radiation Detection System;Advanced Materials;2024-08-19

3. Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions;Applied Physics Letters;2024-08-12

4. Performance improvement of dye-sensitized solar cells by using Ga2O3 blocking layer passivation;Journal of Materials Science;2024-08

5. Cathodoluminescence studies of electron injection effects in p-type gallium oxide;AIP Advances;2024-08-01

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