Development of a-Ga2O3 Power Devices
Author:
Affiliation:
1. FLOSFIA INC.,Kyoto,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9806820/9806821/09807052.pdf?arnumber=9807052
Reference23 articles.
1. Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition
2. Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics
3. Evaluation of Misfit Relaxation in α-Ga2O3Epitaxial Growth on α-Al2O3Substrate
4. Reduction in edge dislocation density in corundum-structured α-Ga2O3layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3buffer layers
5. Electrical Properties of Sn‐Doped α‐Ga 2 O 3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition
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1. Progress in α-Ga2O3 for practical device applications;Japanese Journal of Applied Physics;2023-06-01
2. Effect of dislocations and impurities on carrier transport in α-Ga2O3 on m-plane sapphire substrate;Journal of Materials Research;2023-05-12
3. Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn);Journal of Physics D: Applied Physics;2023-05-09
4. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications;Applied Physics Letters;2022-12-26
5. Underlying Technologies in Medium Voltage Systems;The Journal of The Institute of Electrical Engineers of Japan;2022-12-01
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