Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing-Reference-Cited by-同舟云学术

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Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing

Published:2022-07-18 Issue:11 Volume:259 Page:2200235
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Narita Tetsuo¹^ORCID,Uedono Akira²,Kachi Tetsu³

Affiliation:

1. Power Electronics & Device Research‐Domain Toyota Central R&D Labs., Inc. Nagakute Aichi 480‐1192 Japan

2. Division of Applied Physics Faculty of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki 305‐8573 Japan

3. Institute of Materials and Systems for Sustainability Nagoya University Nagoya 464‐8601 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200235

Reference36 articles.

1. Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies

2. Surface roughening in ion implanted 4H-silicon carbide

3. P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

4. Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)

5. Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer;Journal of Applied Physics;2024-08-01

2. Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN;physica status solidi (RRL) – Rapid Research Letters;2024-04-22

3. Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride;Materials Science in Semiconductor Processing;2024-03

4. Perspective on defect characterization in semiconductors by positron annihilation spectroscopy;Journal of Applied Physics;2024-01-23

5. Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence;physica status solidi (b);2024-01-07

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