Ion milling of InP specimens with Ar/O2 for transmission electron microscopy-Reference-Cited by-同舟云学术

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Ion milling of InP specimens with Ar/O2 for transmission electron microscopy

Published:1987-01 Issue:1 Volume:5 Page:107-108
ISSN:0741-0581
Container-title:Journal of Electron Microscopy Technique
language:en
Short-container-title:J. Elec. Microsc. Tech.

Author:

Ivey D. G.,Piercy G. R.

Publisher

Wiley

Subject

Anatomy

Reference3 articles.

1. Iodine ion milling of indium‐containing compound semiconductors

2. Ion beam milling of InP with an Ar/O2‐gas mixture

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive ion milling—thinning of compound semiconductors;Vacuum;1994-01

2. Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation;Ultramicroscopy;1993-09

3. Simple method for the preparation of inp based samples for TEM investigation;Journal of Electron Microscopy Technique;1991-07

4. Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy;Applied Physics Letters;1990-04-09

5. Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy;Journal of Applied Physics;1990-01

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