Reactive ion milling—thinning of compound semiconductors
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference9 articles.
1. The preparation of transmission electron microscope specimens from compound semiconductors by ion milling
2. Formation and elimination of surface ion milling defects in cadmium telluride, zinc sulphide and zinc selenide
3. A technique for the preparation of cross-sectional TEM samples of ZnSe/GaAs heterostructures which eliminates process-induced defects
4. Surface composition and etching of III‐V semiconductors in Cl2ion beams
5. Iodine ion milling of indium‐containing compound semiconductors
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1. Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement;Journal of Applied Physics;2010-12-15
2. Luminescence effects of ion-beam bombardment of CdTe surfaces;Journal of Luminescence;2009-09
3. Grain boundary compositions in Cu(InGa)Se2;Journal of Applied Physics;2007-01-15
4. Advanced Techniques in TEM Specimen Preparation;Progress in Transmission Electron Microscopy 1;2001
5. Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction;Microscopy Research and Technique;1996-11-01
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