Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102499
Reference23 articles.
1. Molecular beam epitaxial growth of InGaAlP on (100) GaAs
2. Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures
3. Atmospheric pressure organometallic vapor‐phase epitaxial growth of (AlxGa1−x)0.51In0.49P (xfrom 0 to 1) using trimethylalkyls
4. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
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1. Microstructure Map for Self-Organized Phase Separation during Film Deposition;Physical Review Letters;2012-08-20
2. Monte Carlo simulations applied toAlxGayIn1−x−yXquaternary alloys(X=As,P,N): A comparative study;Physical Review B;2005-05-13
3. Evolution of surface structure and phase separation in GaInAsSb;Journal of Crystal Growth;2001-05
4. Correlation between surface step structure and phase separation in epitaxial GaInAsSb;Applied Physics Letters;2000-04-10
5. Thermodynamics;Organometallic Vapor-Phase Epitaxy;1999
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