Evolution of surface structure and phase separation in GaInAsSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors
2. Temperature dependence of continuous wave threshold current for 2.3–2.6 μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers
3. High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
4. MOVPE growth of GaInAsSb
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1. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
2. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence;Journal of Applied Physics;2015-09-21
3. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers;Journal of Crystal Growth;2014-04
4. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates;Journal of Applied Physics;2013-05-14
5. Antimonide Optoelectronics for Infrared Chemical Sensing;Advanced Photonics 2013;2013
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