Step Flow at Homoepitaxy of Si(111) with (7 × 7) ↔ (1 × 1) Superstructure Phase Transition
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. On the phase transition between the (7 × 7) and (1 × 1) structures of silicon (111) surface studied by reflection electron microscopy
2. Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxy
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of (7×7)–“1×1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111);Journal of Crystal Growth;2015-09
2. Impact of surface phase coexistence on the development of step-free areas on Si(111);Frontiers of Materials Science;2015-04-19
3. Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7×7)-“1×1” surface phase transition;Surface Science;2013-12
4. Preparation of large step-free mesas on Si(111) by molecular beam epitaxy;physica status solidi (c);2012-08-27
5. A Growth Technique to Make Extensive Atomically Flat Silicon Surfaces;MRS Proceedings;2000
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