Impact of surface phase coexistence on the development of step-free areas on Si(111)
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11706-015-0282-z.pdf
Reference20 articles.
1. Fissel A, Krügener J, Osten H J. Preparation of large step-free mesas on Si(111) by molecular beam epitaxy. physica status solidi (c), 2012, 10–11: 2050–2053
2. Krügener J, Osten H J, Fissel A. Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7×7)-“1×1” surface phase transition. Surface Science, 2013, 618: 27–35
3. Hannon J B, zu Heringdorf F J, Tersoff J, et al. Phase coexistence during surface phase transitions. Physical Review Letters, 2001, 86(21): 4871–4874
4. Hannon J B, Tersoff J, Tromp R M. Surface stress and thermodynamic nanoscale size selection. Science, 2002, 295(5553): 299–301
5. Hannon J B, Tersoff J, Reuter M C, et al. Influence of supersaturation on surface structure. Physical Review Letters, 2002, 89(26): 266103 (4 pages)
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1. Влияние потока Si на фазовый переход (77)(11) на поверхности Si (111) / Мансуров В.Г., Галицын Ю.Г., Малин Т.В., Милахин Д.С., Журавлев К.С;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
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