Photoreflectance studies of (Al, Ga)As/GaAs heterostructures and devices
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference76 articles.
1. , and , Proc. Internat. Conf. II-VI Semiconducting Compounds, Providence 1968, Ed. D. G. THOMAS (p. 136).
2. Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAs
3. Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation‐doped heterojunctions
4. Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width
5. Modulated-reflectance spectroscopy of InP doping superlattices
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1. Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures;Materials Science and Engineering: B;2001-03
2. Nondestructive room-temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and surface photovoltage spectroscopy;SPIE Proceedings;2000-07-14
3. Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells;Superlattices and Microstructures;1999-10
4. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy;Semiconductor Science and Technology;1998-12-01
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