Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96997
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4. Measurements of electric-field-induced energy-level shifts in GaAs single-quantum-wells using electroreflectance
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1. Photoreflectance characterization of GaAs/AlAs quantum wells with super-flat interfaces grown by molecular beam epitaxy;Physica E: Low-dimensional Systems and Nanostructures;2004-03
2. Near-field photoreflectance spectroscopy of quantum well structures;Applied Physics Letters;2001-04-16
3. Photoreflectance study of the surface state density and distribution function of InAlAs;Journal of Applied Physics;2001-01
4. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
5. Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures;Journal of Applied Physics;1998-04
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