Monolithically Integrated Circuits from Functional Oxides-Reference-Cited by-同舟云学术

Monolithically Integrated Circuits from Functional Oxides

Published:2013-11-24 Issue:1 Volume:1 Page:1300031
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Jany Rainer¹,Richter Christoph¹²,Woltmann Carsten²,Pfanzelt Georg²,Förg Benjamin¹,Rommel Marcus²,Reindl Thomas²,Waizmann Ulrike²,Weis Jürgen²,Mundy Julia A.³,Muller David A.³⁴,Boschker Hans²,Mannhart Jochen²

Affiliation:

1. Experimental Physics VI; Augsburg University; 86135 Augsburg Germany

2. Max Planck Institute for Solid State Research; 70659 Stuttgart Germany

3. School of Applied and Engineering Physics; Cornell University; Ithaca NY USA

4. Kavli Institute at Cornell for Nanoscale Science; Ithaca New York 14853 USA

Funder

Deutsche Forschungsgemeinschaft

Army Research Office

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201300031/fullpdf

Reference43 articles.

1. Ring Oscillator Circuit Based on ZnO Thin Film Transistors Fabricated by RF Magnetron Sputtering

2. Fast PEALD ZnO Thin-Film Transistor Circuits

3. Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

4. The Basis of the Electron Theory of Metals, with Special Reference to the Transition Metals

5. Metal-insulator transitions

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