Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches-Reference-Cited by-同舟云学术

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Published:2017-11-09 Issue:1 Volume:5 Page:1700981
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Li Minmin¹,Zheng Jiwen¹,Xu Huihua¹,Wang Zhaogui¹,Wu Qian¹,Huang Bolong²,Zhou Hang³,Liu Chuan¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and TechnologySchool of Electronics and Information TechnologySun Yat‐sen University Guangzhou 510275 China

2. Department of Applied Biology and Chemical Technologythe Hong Kong Polytechnic UniversityHung Hom, KowloonHong Kong SAR, and The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057 China

3. Shenzhen Key Lab of Thin Film Transistor and Advanced DisplayPeking University Shenzhen Graduate SchoolPeking University Shenzhen 518055 China

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201700981

Reference37 articles.

1. Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process