Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field-Reference-Cited by-同舟云学术

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Spectroscopic study of partially ordered semiconductor heterojunction under high pressure and high magnetic field

Published:2001 Issue:10 Volume:32 Page:835-839
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J. Raman Spectrosc.

Author:

Yu P. Y.,Martinez G.,Zeman J.,Uchida K.

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Reference22 articles.

1. Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors

2. Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure

3. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

4. Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence Up-conversion of CdSe/ZnS Core/shell Quantum Dots under High Pressure;The Journal of Physical Chemistry C;2009-03-03

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