Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy-Reference-Cited by-同舟云学术

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Published:2020-04 Issue:4 Volume:257 Page:1900564
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Yamaguchi Akira¹^ORCID,Oozeki Daisuke²,Kawamoto Naoya²,Takekawa Nao²,Bulsara Mayank³,Murakami Hisashi²,Kumagai Yoshinao²,Matsumoto Koh¹,Koukitu Akinori²

Affiliation:

1. Taiyo Nippon Sanso Corporation Koyama 1-3-26 Shinagawa-ku Tokyo 142-8558 Japan

2. Tokyo University of Agriculture and Technology Nakamachi 2-24-16 Koganei-shi Tokyo 184-8588 Japan

3. Matheson Tri-Gas Inc. 150 Allen Road, Suite 302 Basking Ridge NJ 07920 USA

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900564

Reference19 articles.

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2. High voltage and high current density vertical GaN power diodes

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4. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

5. HVPE GaN wafers with improved crystalline and electrical properties

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