AlGaN/GaN HEMT structures on ammono bulk GaN substrate-Reference-Cited by-同舟云学术

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AlGaN/GaN HEMT structures on ammono bulk GaN substrate

Published:2014-04-17 Issue:7 Volume:29 Page:075004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kruszewski P,Prystawko P,Kasalynas I,Nowakowska-Siwinska A,Krysko M,Plesiewicz J,Smalc-Koziorowska J,Dwilinski R,Zajac M,Kucharski R,Leszczynski M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=7/a=075004/pdf

Reference18 articles.

1. Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

2. High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

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