Monte Carlo transport simulation of velocity undershoot in zinc blende and wurtzite InN
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
2. Quasiparticle band structure based on a generalized Kohn-Sham scheme
3. Ensemble Monte Carlo study of electron transport in wurtzite InN
4. Nonparabolicity effect on bulk transport properties in wurtzite InN
5. Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
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1. Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method;Solid State Communications;2019-02
2. Electron Momentum and Energy Relaxation Times in Wurtzite GaN, InN and AlN: A Monte Carlo Study;Journal of Electronic Materials;2017-11-30
3. Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency;Applied Physics A;2016-05-09
4. Influence of constant electric field on circular photogalvanic effect in material with Rashba Hamiltonian;Journal of Computational Electronics;2014-09-24
5. Anisotropic low-field electron diffusion coefficient and mobility in wurtzite indium nitride;physica status solidi (b);2013-09-04
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