Ensemble Monte Carlo study of electron transport in wurtzite InN-Reference-Cited by-同舟云学术

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Ensemble Monte Carlo study of electron transport in wurtzite InN

Published:1999-01-15 Issue:2 Volume:85 Page:916-923
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bellotti Enrico,Doshi Bhautik K.,Brennan Kevin F.,Albrecht John D.,Ruden P. Paul

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369211

Reference28 articles.

1. Prospects for device implementation of wide band gap semiconductors

2. Optimum semiconductors for high-power electronics

3. Radio-Frequency Power Transistors Based on 6H- and 4H-SiC

4. Progress and prospects of group-III nitride semiconductors

5. Conductivity control of GaN and fabrication of UV/blue GaN light emitting devices

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1. Ground state and polarization of a hydrogenlike atom near a Weyl semimetal;Physical Review A;2023-03-16

2. On the limitations of thermal atomic layer deposition of InN using ammonia;Journal of Vacuum Science & Technology A;2023-02-21

3. Optical excitations of graphene-like materials: group III-nitrides;Nanoscale Advances;2023

4. Modeling of the effects of non-uniform electric field on resonant tunneling in superlattices;Sigma Journal of Engineering and Natural Sciences – Sigma Mühendislik ve Fen Bilimleri Dergisi;2023

5. An electron–phonon Monte Carlo study on thermal transport in GaN;International Journal of Thermal Sciences;2022-11

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